(China (Mainland))
Product Summary
The BLV861 is a UHF linear push-pull power transistor. The BLV861 NPN silicon planar epitaxial transistor is with two sections in push-pull configuration. The BLV861 is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap.
Parametrics
BLV861 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 65 V; (2)VCEO collector-emitter voltage open base: 30 V; (3)VEBO emitter-base voltage open collector: 3 V; (4)IC collector current (DC): 15 A; (5)Ptot total power dissipation Tmb = 25 ℃: 220 W; (6)Tstg storage temperature: -65 +150 ℃; (7)Tj operating junction temperature: 200 ℃.
Features
BLV861 features: (1)Double stage internal input and output matching networks for an optimum wideband capability and high gain; (2)Polysilicon emitter ballasting resistors for an optimum temperature profile; (3)Gold metallization ensures excellent reliability.
Diagrams
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