(China (Mainland))
Product Summary
The MG25Q6ES51 is a TOSHIBA GTR Module, which is Silicon N Channel IGBT. It is designed for High Power Switching Applications and Motor Control Applications.
Parametrics
MG25Q6ES51 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Gate-emitter voltage: ±20 V; (3)Collector current: 35/25 A; (4)Forward current: 25 A; (5)Collector power dissipation (Tc = 25℃): 200 W; (6)Junction temperature: 150 ℃; (7)Storage temperature range: -40 ~ 125 ℃; (8)Isolation voltage: 2500 (AC 1 min.) V; (9)Screw torque (Terminal / mounting): 6 N·m.
Features
MG25Q6ES51 features: (1)The electrodes are isolated from case; (2)high input impedance; (3)6 IGBTs built into 1 package.
Diagrams
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