(China (Mainland))
Product Summary
The SI2312BDS-T1-GE3 is a N-Channel 20-V (D-S) MOSFET.
Parametrics
SI2312BDS-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 20V; (2)Gate-Source Voltage VGS: ± 8V; (3)Continuous Drain Current (TJ = 150 ℃), TA = 25 ℃: 5.0V; TA = 70 ℃: 3.1V; (4)Pulsed Drain Current, IDM: 15A; (5)Avalanche Currentb: L = 0.1 mH, IAS: 13A; (6)Single Avalanche Energy EAS: 8.45 mJ; (7)Continuous Source Current (Diode Conduction) IS: 0.63 A; (8)Power Dissipationa, TA = 25 ℃: PD: 1.25W; TA = 70 ℃: 0.80W; (9)Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 ℃.
Features
SI2312BDS-T1-GE3 features: (1)Halogen-free Option Available; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SI2312BDS-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V |
Data Sheet |
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Data Sheet |
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