(China (Mainland))
Product Summary
The 2SD2195 is a General Purpose Transistor.
Parametrics
2SD2195 absolute maximum ratings: (1)Storage temperature, Tstg: -55 to 150℃; (2)Junction temperature, Tj: 150℃; (3)Collector current, Ic: 0.15A (DC); 0.2A (pulse); (4)Emitter-base voltage, VCBO: 60V; (5)Collector-emitter voltage, VCEO: 50V; (6)Collector-base voltage, VEBO: 12V; (7)Collector power dissipation, Pc: 0.2W.
Features
2SD2195 features: (1)High DC current gain; (2)High emitter-base voltage. (VCBO=12V); (3)Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA).
Diagrams
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 2SD2195 |
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Data Sheet |
Negotiable |
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2SD2195T100 |
ROHM Semiconductor |
Transistors Darlington DARL NPN 100V 2A |
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