RC28F640J3C-120

Intel StrataFlash Memory, 56-Lead TSOP, Multi-Level Cell Technology, High-Density Symmetrical 128-Kbyte Blocks

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Price:: US $1.00~50.00 / piece [Get Latest Price]

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PartNumber:: RC28F640J3C-120

Brand:: Intel Corporation - Intel | Pack: BGA | D/C: 04+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-10-14

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Part Number:RC28F640J3C-120
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Product Summary

The RC28F640J3C-120 is an Intel StrataFlash Memory. It provides 2X the bits in 1X the space, with new features for mainstream performance. Using the same NOR-based ETOX technology as Intel’s one-bit-per-cell products, the RC28F640J3C-120 takes advantage of over one billion units of flash manufacturing experience since 1987. The RC28F640J3C-120 is ideal for code and data applications where high density and low cost are required. Examples include networking, telecommunications, digital set top boxes, audio recording, and digital imaging.

Parametrics

RC28F640J3C-120 absolute maximum ratings: (1)Temperature under Bias Extended:–40℃ to +85℃; (2)Storage Temperature:–65℃ to +125℃; (3)Voltage On Any signal:–2.0 V to +5.0 V; (4)Output Short Circuit Current:100 mA.

Features

RC28F640J3C-120 features: (1)110/115/120/150 ns Initial Access Speed; (2)125 ns Initial Access Speed (256 Mbit density only); (3)25 ns Asynchronous Page mode Reads; (4)30 ns Asynchronous Page mode Reads (256Mbit density only); (5)32-Byte Write Buffer: 6.8 μs per byte effective programming time; (6)Program and Erase suspend support; (7)Flash Data Integrator (FDI), Common Flash Interface (CFI)Compatible; (8)128-bit Protection Register: 64-bit Unique Device Identifier, 64-bit User Programmable OTP Cells; (9)Absolute Protection with VPEN = GND; (10)Individual Block Locking; (11)Block Erase/Program Lockout during Power Transitions; (12)Multi-Level Cell Technology: High Density at Low Cost; (13)High-Density Symmetrical 128-Kbyte Blocks.