Product Summary

The STB20NM50FDT4 is a Power MOSFET. It associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. The STB20NM50FDT4 is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. The application of it is Switching applications.

Parametrics

STB20NM50FDT4 absolute maximum ratings: (1)Drain-source voltage (VGS=0):500V; (2)Gate-source voltage:±30V; (3)Drain current (continuous) at TC = 25℃:20A; (4)Drain current (continuous) at TC = 100℃:14A; (5)Drain current (pulsed):80A; (6)Total dissipation at TC = 25℃:192W; (7)Peak diode recovery voltage slope:20V/ns; (8)Storage temperature:-65℃ to 150℃; (9)Operating junction temperature:150℃.

Features

STB20NM50FDT4 features: (1)High dv/dt and avalanche capabilities; (2)100% avalanche tested; (3)Low input capacitance and gate charge; (4)Low gate input resistance; (5)Tight process control and high manufacturing yields.

Diagrams

STB20NM50FDT4 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
STB20NM50FDT4
STB20NM50FDT4

STMicroelectronics

MOSFET N-Ch 500 Volt 20 Amp

Data Sheet

0-625: $1.92
625-1000: $1.60
1000-2000: $1.55
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
STB200N04
STB200N04

STMicroelectronics

MOSFET NCh 40V 0.0035U 120A

Data Sheet

Negotiable 
STB200N4F3
STB200N4F3

STMicroelectronics

MOSFET N-Ch, 40V-0.0035ohms 120A

Data Sheet

Negotiable 
STB200N6F3
STB200N6F3

STMicroelectronics

MOSFET N-channel 60 V 3 m 120 A TO-22

Data Sheet

Negotiable 
STB200NF03
STB200NF03

Other


Data Sheet

Negotiable 
STB200NF03-1
STB200NF03-1

Other


Data Sheet

Negotiable 
STB200NF03T4
STB200NF03T4

STMicroelectronics

MOSFET N-Ch 30 Volt 120 Amp

Data Sheet

0-590: $1.34
590-1000: $1.07
1000-2000: $1.04
2000-5000: $0.97