(China (Mainland))
Product Summary
The STB20NM50FDT4 is a Power MOSFET. It associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. The STB20NM50FDT4 is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. The application of it is Switching applications.
Parametrics
STB20NM50FDT4 absolute maximum ratings: (1)Drain-source voltage (VGS=0):500V; (2)Gate-source voltage:±30V; (3)Drain current (continuous) at TC = 25℃:20A; (4)Drain current (continuous) at TC = 100℃:14A; (5)Drain current (pulsed):80A; (6)Total dissipation at TC = 25℃:192W; (7)Peak diode recovery voltage slope:20V/ns; (8)Storage temperature:-65℃ to 150℃; (9)Operating junction temperature:150℃.
Features
STB20NM50FDT4 features: (1)High dv/dt and avalanche capabilities; (2)100% avalanche tested; (3)Low input capacitance and gate charge; (4)Low gate input resistance; (5)Tight process control and high manufacturing yields.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 STB20NM50FDT4 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 20 Amp |
Data Sheet |
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