Product Summary

The STP11NM80 is a Power MOSFET. It associates the multiple drain process with the Company’s PowerMesh horizontal layout assuring an outstanding low on-resistance. The application of the STP11NM80 is Switching applications.

Parametrics

STP11NM80 absolute maximum ratings: (1)Drain-source voltage (VGS = 0): 800V; (2)Gate-source voltage: ±30V; (3)Drain current (continuous) at TC = 25℃:11A; (4)Drain current (continuous) at TC=100℃:8A; (5)Drain current (pulsed):44A; (6)Total dissipation at TC = 25℃:150W; (7)Derating factor:1.2W/℃; (8)Operating junction temperature:-65℃ to +150℃; (9)Storage temperature:-65℃ to +150℃.

Features

STP11NM80 features: (1)Low input capacitance and gate charge; (2)Low gate input resistance; (3)Best RDS(on) *Qg in the industry.

Diagrams

STP11NM80 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Data Sheet
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1-10: $2.83
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100-250: $2.14
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