Product Summary

The TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. The TSAL6200 is ideal for: (1)Infrared remote control units with high power requirements; (2)Free air transmission systems; (3)Infrared source for optical counters and card readers.

Parametrics

TSAL6200 absolute maximum ratings: (1)Reverse voltage, VR: 5 V; (2)Forward current, IF: 100 mA; (3)Peak forward current, tp/T = 0.5, tp = 100 μs, IFM: 200 mA; (4)Surge forward current, tp = 100 μs, IFSM: 1.5 A; (5)Power dissipation, PV: 160 mW; (6)Junction temperature, Tj: 100 ℃; (7)Operating temperature range, Tamb: - 40 to + 85 ℃; (8)Storage temperature range, Tstg: - 40 to + 100 ℃; (9)Soldering temperature, t ≤ 5 s, 2 mm from case, Tsd: 260 ℃; (10)Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB, RthJA: 230 K/W.

Features

TSAL6200 features: (1)Package type: leaded; (2)Package form: T-1.; (3)Dimensions (in mm): Φ 5; (4)Peak wavelength: λp = 940 nm; (5)High reliability; (6)High radiant power; (7)High radiant intensity; (8)Angle of half intensity: Φ = ±17; (9)Low forward voltage; (10)Suitable for high pulse current operation; (11)Good spectral matching with Si photodetectors; (12)Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.

Diagrams

TSAL6200 circuit diagram

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