(China (Mainland))
Product Summary
The 2N6688 is a Silicon NPN Power Transistor designed for power supplies and other high-voltage switching applications.
Parametrics
2N6688 absolute maximum ratings: (1)VCBO, Collector-base voltage Open emitter: 300 V; (2)VCEO, Collector-emitter voltage Open base: 200 V; (3)VEBO, Emitter-base voltage Open collector: 8 V; (4)IC, Collector current: 20 A; (5)ICM, Collector current-peak: 50 A; (6)IB, Base current: 8 A; (7)PC, Collector power dissipation TC=25℃: 200 W; (8)Tj, Junction temperature: 200℃; (9)Tstg, Storage temperature: -65 to 200℃.
Features
2N6688 features: (1)With TO-3 package; (2)Fast switching speed; (3)Low collector saturation voltage.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2N6688 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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2N6609 |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 140V 150W PNP |
Data Sheet |
Negotiable |
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2N6609G |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 140V 150W PNP |
Data Sheet |
Negotiable |
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2N6650 |
Central Semiconductor |
Transistors Darlington PNP Pwr Darlington |
Data Sheet |
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2N6659 |
Vishay/Siliconix |
MOSFET 35V 1.8 OHM |
Data Sheet |
Negotiable |
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2N6659-E3 |
Vishay/Siliconix |
MOSFET 35V 1.8 Ohm |
Data Sheet |
Negotiable |
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2N6660 |
Supertex |
MOSFET 60V 3Ohm |
Data Sheet |
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