Product Summary

The 3SK299 is a MES field EFFECT transistor.

Parametrics

3SK299 absolute maximum ratings: (1)Drain to Source Voltage VDSX: 13 V; (2)Gate1 to Source Voltage VG1S: –4.5 V; (3)Gate2 to Source Voltage VG2S: –4.5 V; (4)Drain Current ID: 40 mA; (5)Total Power Dissipation PT: 120 mW; (6)Channel Temperature Tch: 125 ℃; (7)Storage Temperature Tstg: –55 to +125 ℃.

Features

3SK299 features: (1)Suitable for use as RF amplifier in UHF TV tuner; (2)Low Crss : 0.02 pF TYP; (3)High GPS : 20 dB TYP; (4)Low NF : 1.1 dB TYP; (5)4 pin small mini mold package.

Diagrams

3SK299 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
3SK299
3SK299

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
3SK263-5-TG-E
3SK263-5-TG-E


MOSFET N-CH 15V 30MA CP4

Data Sheet

Negotiable 
3SK298
3SK298

Other


Data Sheet

Negotiable 
3SK299
3SK299

Other


Data Sheet

Negotiable 
3SK297
3SK297

Other


Data Sheet

Negotiable 
3SK296
3SK296

Other


Data Sheet

Negotiable 
3SK295
3SK295

Other


Data Sheet

Negotiable