Product Summary

The BSM100GT120DN2 is an IGBT power module.

Parametrics

BSM100GT120DN2 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)collector-gate voltage: 1200V; (3)gate-emitter voltage: ±20V; (4)DC collector current: 150A; (5)pulsed collector current: 300A; (6)power dissipation per IGBT: 680W; (7)Storage temperature: -55 to 150℃.

Features

BSM100GT120DN2 features: (1)Three single switches; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)Solderable Terminals.

Diagrams

BSM100GT120DN2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM100GT120DN2
BSM100GT120DN2
Infineon Technologies
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Data Sheet
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(USD)		 Quantity
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Data Sheet
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BSM100GB120DLC
BSM100GB120DLC
Infineon Technologies
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Data Sheet
0-6: $78.93
6-10: $71.03
BSM100GB120DLCK
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Data Sheet
0-1: $49.93
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Infineon Technologies
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Data Sheet
0-1: $82.74
1-10: $74.47